PART |
Description |
Maker |
LC322260J LC322260T-70 LC322260T-80 LC322260J-70 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Read/Write CONNECTOR ACCESSORY 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode Byte Read/Write
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
M5M51008BKV-15VL M5M51008BKV-15VLL M5M51008BKV-70V |
128K X 8 STANDARD SRAM, 120 ns, PDSO32 From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
HM62V8128 |
131072 x 8-Bit High Speed CMOS SRAM
|
Hitachi
|
HY62LF16804A-I HY62LF16804A-C HY62LF16804A HY62LF1 |
512K X 16 STANDARD SRAM, 85 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits 512Kx16bit full CMOS SRAM
|
HYNIX SEMICONDUCTOR INC Nel Frequency Controls,inc
|
CXK5T81000ATM/AYM/AM-12LLX CXK5T81000ATM/AYM/AM-10 |
128K X 8 STANDARD SRAM, 120 ns, PDSO32 128K X 8 STANDARD SRAM, 100 ns, PDSO32 131072-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
M5M512R M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ- |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation
|
LC33864P-80 LC33864PM-10 LC33864PM-70 LC33864PM-80 |
512K PSEUDO SRAM 512K (65536 words X 8 bits) Pseudo-SRAM DRAGONBALL MX1 12k5536字8位)伪SRAM
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd. Sanyo Electric Co., Ltd.
|
TC551001PL-70 TC551001FL-10 TC551001FL-70 |
x8 SRAM x8SRAM
131,072 Words x 8-Bit Static RAM
|
Toshiba
|
M5M5V108CFP-10HI M5M5V108CFP-10XI M5M5V108CFP-70HI |
1048576-bit (131072-word by 8-bit) CMOS static RAM From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
HY62LF16806B-I HY62LF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits
|
HYNIX
|
HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62KF0840 |
High speed, super low power and 4M bit full CMOS SRAM organized as 512K words by 8bits
|
HYNIX
|